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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. october 2012 doc id 023231 rev 2 1/14 14 STL6N3LLH6 n-channel 30 v, 0.021 typ., 6 a stripfet? vi deepgate? power mosfet in a powerflat? 2x2 package datasheet ? preliminary data features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) high avalanche ruggedness low gate drive power losses very low switching gate charge applications switching application description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order code v dss r ds(on) max. i d p tot STL6N3LLH6 30 v 0.025 (v gs =10 v) 0.04 (v gs =4.5 v) 6 a 2.4w powerflat? 2x2 1 2 3 6 5 4 1 2 3 1(d) 2(d) 3 (g) 6(d) 5(d) 4( s ) d s am11269v1 table 1. device summary order code marking package packaging STL6N3LLH6 stg1 powerflat? 2x2 tape and reel www.st.com
contents STL6N3LLH6 2/14 doc id 023231 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STL6N3LLH6 electrical ratings doc id 023231 rev 2 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d drain current (continuous) at t pcb = 25 c 6 a i d drain current (continuous) at t pcb = 100 c 3.75 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 24 a p tot total dissipation at t pcb = 25 c 2.4 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb 52 c/w
electrical characteristics STL6N3LLH6 4/14 doc id 023231 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v, v ds = 30 v, t j = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3 a v gs = 4.5 v, i d = 3 a 0.021 0.032 0.025 0.04 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 24 v, f=1 mhz, v gs =0 - 283 61 31 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 10 v, i d = 6 a v gs = 4.5 v (see figure 14) - 3.6 1.5 1.1 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 10 v, i d = 3 a, r g = 4.7 , v gs = 4.5 v (see figure 13) - 4.8 11.2 9.4 5.4 - ns ns ns ns
STL6N3LLH6 electrical characteristics doc id 023231 rev 2 5/14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 6 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 24 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 6 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a, di/dt = 100 a/s, v dd = 16 v, t j = 150 c - 10.6 2.8 0.5 ns nc a
electrical characteristics STL6N3LLH6 6/14 doc id 023231 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100m s 10m s tj=150c tc=25c s ingle p u l s e 1 s 0.01 100 am15 3 74v1 10 -4 10 -2 10 - 3 10 -1 10 10 1 10 2 t ( s ) p 10 - 3 10 -2 10 -1 k s ingle p u l s e 0.01 0.02 0.05 0.1 0.2 =0.5 zthj-pc b =k * rthj-pc b , rthj-pc b =145 c/w am15 3 75v1 i d 15 10 5 0 0 0.5 v d s (v) 1.5 (a) 1 20 25 2v 3 v 4v v g s =10v 3 0 5v 6v am15 3 61v1 i d 8 6 2 0 0 3 v g s (v) (a) 1 10 4 2 v d s = 3 v am15 3 69v1 v g s 6 4 2 0 0 2 q g (nc) (v) 8 4 6 10 v dd =15v i d =7a am15 3 5 8 v1 r d s (on) 15 10 5 0 2 10 i d (a) ( ) 6 20 25 4 8 12 v g s = 4.5 v 3 0 3 5 40 am15 3 72v1
STL6N3LLH6 electrical characteristics doc id 023231 rev 2 7/14 figure 8. capacitance variations figure 9. normalized on-resistance vs temperature figure 10. normalized gate threshold voltage vs temperature figure 11. normalized b vdss vs temperature figure 12. source-drain diode forward characteristics c 100 1 0 10 v d s (v) (pf) 20 ci ss co ss cr ss 10 f= 1 mhz am15 3 70v1 r d s (on) 1.2 1 0.4 00 -55 -5 t j (c) (norm) - 3 0 70 20 45 95 0.2 0.6 0. 8 1.4 1.6 120 i d = 3 .5 a v g s = 10 v 145 1. 8 am15 3 60v1 v g s (th) 0.6 0.4 0.2 0 -55 -5 t j (c) (norm) - 3 0 0. 8 70 20 45 95 120 i d =250 a 145 1 1.2 am15 3 6 8 v1 v d s -55 -5 t j (c) (norm) - 3 0 70 20 45 95 0. 8 0. 8 5 0.9 0.95 1 1.1 1.15 1.05 i d = 1ma 120 am15 3 64v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0.2 0. 3 0.4 0.5 0.6 0.7 t j =-55c t j =150c t j =25c 0. 8 0.9 1 am15 3 65v1
test circuits STL6N3LLH6 8/14 doc id 023231 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STL6N3LLH6 package mechanical data doc id 023231 rev 2 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL6N3LLH6 10/14 doc id 023231 rev 2 table 8. powerflat? 2x2 mechanical data dim. mm. min. typ. max. a 0.70 0.75 0.80 a1 0.00 0.02 0.05 a3 0.20 b 0.25 0.30 0.35 d 1.90 2.00 2.10 e 1.90 2.00 2.10 d2 0.90 1.00 1.10 e2 0.80 0.90 1.00 e 0.55 0.65 0.75 k 0.15 0.25 0.35 k1 0.20 0.30 0.40 k2 0.25 0.35 0.45 l 0.20 0.25 0.30 l1 0.65 0.75 0.85
STL6N3LLH6 package mechanical data doc id 023231 rev 2 11/14 figure 19. powerflat? 2 x 2 drawing 83 6 8 575_rev_b
package mechanical data STL6N3LLH6 12/14 doc id 023231 rev 2 figure 20. powerflat? 2 x 2 recommended footprint (dimensions in millimeters) footprint
STL6N3LLH6 revision history doc id 023231 rev 2 13/14 5 revision history table 9. document revision history date revision changes 25-may-2012 1 first release 11-oct-2012 2 ? added section 2.1: electrical characteristics (curves) . ?r ds(on) values (typ. and max.) updated ? typical values updated in ta bl e 5 , 6 and 7 ? minor text changes.
STL6N3LLH6 14/14 doc id 023231 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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